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Part Number S3160 Revision A - August 12, 2004
S3160
2.5 Gbps Wide Bandwidth Transimpedance Amplifier
FEATURES
* * * * * * * Greater than 2 GHz Bandwidth 3 k differential transimpedance Single 3.3 V supply 6.5 pA/(Hz) typical noise current density 2.2 mA peak to peak max input current Voltage limited outputs Maximum Die size: 1.27 mm by 1.27 mm
Data Sheet
GENERAL DESCRIPTION
The S3160 is a high-speed transimpedance amplifier (TIA) for 2.5 Gbps applications. Input currents as high as 2.2 mA can be amplified with low duty cycle distortion. The low input noise allows signals down to 4 A (peak to peak) to be detected with a signal to noise ratio of 22 dB (allows for BER< 1E-10). The outputs are voltage limited to 1000 mV, differential, in order to allow a wide input dynamic range without exceeding the input voltage range of the post ( l i m i t i n g ) a m p l i f i e r. F i g u r e 1 s h o w s a t y p i c a l application.
APPLICATIONS
* * SONET OC-48 Fiber optic data links
Figure 1. Typical Operating Circuit
V CC C FILT
FILT
VCC Zo = 50
(Limiting Amp and CDR)
RBYPASS OUTP DINP SERDATOP
S3160
OUTN IIN GND Zo = 50 DINN
S3078
SERDATON
Alternate Connection
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
DETAILED DESCRIPTION
Figure 2 depicts the overall block diagram of the S3160 transimpedance amplifier. The amplifier circuitry consists of a transimpedance stage and an output driver stage with a 6 dB gain. The transimpedance amplifier converts the photodiode photocurrent to a voltage. The photodiode can be biased by connecting it to the RBYPASS pin or it can be connected directly to VCC. The amplifier gain is linear for an input of up to 300 A. Above that the transimpedance of the input stage is reduced by the action of the schottky diode, to prevent overdrive of the output stage. The output of the output stage begins to fully limit when the input current reaches 700 A. The output voltage is limited at 1000 mV, differential, peak to peak. Figure 2. S3160 Detailed Block Diagram
V CC
The output of the transimpedance stage is converted to a differential signal by the combination of the output stage and a bias block. This bias block averages the output of the transimpedance stage and establishes the DC input reference for the output stage. The bandwidth of this circuit is set by an on-chip capacitor, but can be reduced by adding an off-chip capacitor, CFILT. This bandwidth corresponds to the low frequency -3 dB cutoff of the TIA. Increasing the value of C FILT will reduce the low frequency -3 dB cutoff. With no CFILT capacitor added it will be at 45 kHz.
CFILT (OPTIONAL) RBYPASS VCC 100 OUTP IIN FILT
X2
BIAS
OUTN
1500
GND
2
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Table 1. S3160 Pad Assignment and Description
Pin Name VCC I/O S Pad # 8 9 10 11 12 1 2 3 4 13 15 14 7 Coordinates [X,Y] (1) [868.9, 1051.4] [669.6, 1051.4] [470.8, 1051.4] [271.8, 1051.4] [90.8, 892.5] [273, 91.4] [472, 91.4] [670.8, 91.4] [870.1, 91.4] [100.925, 702.425] [90.9, 293.3] [97.575, 473.975] [1052.3. 777] +3.3 V Power supply. Description
GND
S
Ground.
RBYPASS
I
Bypass connection for cathode of photodiode.
IIN FILT
I I
PIN diode input. Filter capacitor input. A capacitor to ground can be added at this pad to reduce the low frequency -3 dB cutoff. (See Design Procedures). Negative transimpedance amplifier output. Positive transimpedance amplifier output.
OUTN OUTP
O O
6 5
[1049.275, 567.475] [1049.275, 375.225]
1. The coordinates represent the position of the center of the pad in m, with respect to the lower left corner of the circuit die. 2. Note: I = Input pin, O = Output pin, S = Supply pin.
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Figure 3. S3160 Bonding Pad Location
1.27 mm (Total Die Size) Y-Axis 1.15 mm (Circuit Die Size) VCC VCC VCC VCC
11
10
9
8
VCC
12
1.15 mm (Circuit Die Size) 1.27 mm (Total Die Size)
7 RBYPASS 13 6 IIN 14 5 RBYPASS 15
FILT
OUTN
OUTP
1
2
1
3
4 X-Axis
(0,0) Circuit Die Size GND Total Die Size
2
GND
GND
GND
Note: Pad Size is 94 m X 94 m. The exposed area of the pad is 80 m X 80 m. Die thickness is 254 m (10 mils).
1. The circuit die size is the smallest possible size of the die. The lower left-hand corner of the circuit die is the origin of the xy-coordinate system. Pad coordinates indicated in Table 1 are measured from this origin to the pad's center. 2. The total die size is the largest possible size of the die. It includes a splicing area around the circuit die. The actual size of any given die may vary in size from the minimum (circuit die) size to the maximum (total die) size.
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Table 2. Recommended Operating Conditions
Parameter Ambient Temperature, TA Junction Operating Temperature, TJ Voltage on VCC with respect to GND Min -40 -20 3.135 3.3 Typ Max +85 +105 3.465 Units C C V
Table 3. Absolute Maximum Ratings
The following are the absolute maximum stress ratings for the S3160. Stresses beyond those listed may cause permanent damage to the device. Absolute maximum ratings are stress ratings only and operation of the device at the maximums stated or any other conditions beyond those indicated in the "Recommended Operating Conditions" of this document are not inferred. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter Voltage on VCC with respect to GND Voltage on all Other Pads Storage Temperature Range
Min -0.5 -0.5 -55
Typ
Max 4 VCC +0.3 150
Units V V C
Electrostatic Discharge (ESD) Sensitivity Rating - Human Body Model (HBM): The S3160 is rated to the following ESD voltages based upon JEDEC standard: JESD22-A114-B CLASS 0 - All pins are rated at or above 1000 volts except pins IIN, OUTP and OUTN. OUTP and OUTN are rated at 500 V and IIN is rated to 100 volts. Adherence to standards for ESD protection should be taken during the handling of the devices to ensure that the devices are not damaged. The standards to be used are defined in ANSI standard ANSI/ESD S20.20-1999, "Protection of Electrical and Electronic Parts, Assemblies and Equipment." Contact your local FAE or sales representative for applicable ESD application notes.
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Table 4. AC Electrical Characteristics (Vcc = 3.3 V 5%, TA = -40C to +85C)
Parameter RT Description AC Transimpedance Min 2.56 Typ 2.95 Max 3.34 Units kV/A Conditions 50 Ohm load 0.5 pF photodiode capacitance, 1.5 nH input bond wire inductance. No CFILT connected Peak-to-peak Peak-to-peak, differential
BW
-3 dB Bandwidth
2.7
3.2
3.6
GHz
BWLF IPK VOD IIN, CL IND IN
Low Frequency -3 dB Cutoff Maximum Input Current Maximum Differential output voltage Input Current before clipping Input Noise Current Density Input Noise Current Total Jitter (Pk to Pk) (At 1E-12 BER) Output Ripple Group Delay Variation Output Reflection Coefficient Output Impedance 45 -0.5 -25 250 2.2
45
57
kHz mA
1000
1200
mV A
300 6.5 325 9.3 465
1 dB compression point 0 - 2.5 GHz (Output rms noise)/RT, 2.5 GHz bandwidth Input is 2.488 Gbps, 223-1 PRBS. IIN = 2.2 mA 1 - 2000 MHz 100 - 2500 MHz 1 - 3500 MHz
pA/(Hz) nA
JT RIPPLE Group Delay S22 ROUT
0.12 +0.5 +25 -18 50 58
UI dB pS dB
Table 5. DC Electrical Characteristics (Vcc = 3.3 V 5%, TA = -40C to +85C)
Parameter ICC VBIAS Description Supply Current Input Bias Voltage 0.79 VCC -0.9 Min Typ 40 0.92 VCC -0.65 Max 57 1.0 VCC -0.25 Units mA V 50 line termination to GND (AC Coupled) or 100 line-to-line termination. Conditions
VCM
Common Mode Output Voltage
V
Note: AC Electrical Characteristics are guaranteed by characterization.
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
DESIGN PROCEDURES Determining Capacitor Values
CFILT can be selected using the formula: Low frequency -3 dB cutoff = 1 / [2*400k*(10pF + CFILT)]
APPLICATION INFORMATION
Filtering Through RBYPASS To reduce the effect of supply voltage noise at the cathode of the photodiode, the cathode connection to VCC should be made through the RBYPASS resistor. The RBYPASS resistor and an external capacitor to ground at the cathode of the photodiode will act as a filter to reduce this noise and dampen any resonance at the cathode of the photodiode. Wire Bonding and Layout Information For best performance all GND pads should be connected and the bond wire inductance between the photodiode and the IIN pin should be kept to below 1.5 nH - 2 nH. The back of the die is not metallized and should be connected to ground or left electrically unconnected. The outputs OUTP and OUTN should be terminated equally to prevent instabilities. Figures 4 and 5 show the differential and single-ended terminations.
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Figure 4. Output Differential Termination
Vcc
CFILT
S3160
FILT VDD RBYPASS OUTP
Zo = 50 Zo = 50 100
Limiting Amplifier
OUTN I IN GND
Alternate Connection
Figure 5. Output Single-Ended Termination
Vcc
C FILT
S3160
FILT VDD RBYPASS OUTP
Zo = 50 50 Zo = 50 50
OUTN
I IN
GND
Alternate Connection
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Typical Operating Characteristics Figure 6. Frequency Response (Gain vs. Frequency) Figure 8. Output Voltage vs. Input Current
Figure 9. Supply Current vs. Temperature Figure 7. Eye Diagram (at 2.5 Gbps) (IIN = 2.2 mA)
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
DOCUMENT REVISION HISTORY
Revision A NC Date 08/12/04 2/28/01 Description * Pg. 6, Table 4, changed S22 Max from -22 dB to -18 dB; changed Rout Max from 55 to 58 . * Production release version.
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S3160 - 2.5 Gbps Wide Bandwidth Transimpedance Amplifier
Revision A - August 12, 2004
Data Sheet
Ordering Information
Prefix S-Integrated Circuit Device 3160 Package DI-Industrial Grade Die
X
Prefix
XXXX
Device
X
Package
Applied Micro Circuits Corporation 6290 Sequence Dr., San Diego, CA 92121 Phone: (858) 450-9333 -- (800) 755-2622 -- Fax: (858) 450-9885 http://www.amcc.com
AMCC reserves the right to make changes to its products, its datasheets, or related documentation, without notice and warrants its products solely pursuant to its terms and conditions of sale, only to substantially comply with the latest available datasheet. Please consult AMCC's Term and Conditions of Sale for its warranties and other terms, conditions and limitations. AMCC may discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information is current. AMCC does not assume any liability arising out of the application or use of any product or circuit described herein, neither does it convey any license under its patent rights nor the rights of others. AMCC reserves the right to ship devices of higher grade in place of those of lower grade. AMCC SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. AMCC is a registered Trademark of Applied Micro Circuits Corporation. Copyright (c) 2005 Applied Micro Circuits Corporation.
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